Fabricated with Toshiba’s U-MOS X-H course of, the 100-V TPH3R10AQM N-channel energy MOSFET supplies low on-resistance and an expanded secure working space. The system has a most drain-source on-resistance of three.1 mΩ, which is 16% decrease than the corporate’s 100-V TPH3R70APL MOSFET constructed utilizing an earlier technology course of. Additional, the secure working space is 76% larger than the TPH3R70APL, making the TPH3R10AQM appropriate for linear-mode operation.
In response to Toshiba, minimizing on-resistance and increasing the linear working vary within the secure working space cut back the variety of parallel connections. The TPH3R10AQM has a channel temperature of 175°C, and its gate threshold voltage vary of two.5 V to three.5 V makes it much less prone to malfunction on account of gate voltage noise.
The TPH3R10AQM energy MOSFET can be utilized on the facility strains of commercial tools present in knowledge facilities and communication base stations. Additionally it is helpful for DC/DC converters and voltage regulators.
Housed in a 4.9×6.1-mm SOP Advance(N) bundle, the TPH3R10AQM is delivery now.
Toshiba Digital Units & Storage
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