The primary entries in Toshiba’s lineup of SiC MOSFETs that use a 4-pin TO-247-4L(X) bundle encompass 10 units, 5 rated at 650 V and 5 rated at 1200 V. To attenuate switching loss, their 4-pin TO-247-4L(X) bundle permits Kelvin connection of the sign supply terminal for the gate drive.
The 4-pin bundle reduces the impact of supply wire inductance contained in the bundle, enhancing high-speed switching efficiency. For the brand new TW045Z120C, turn-on loss is roughly 40% decrease and turn-off loss is lowered by roughly 34%, in comparison with Toshiba’s present TW045N120C MOSFET in a 3-pin TO-247 bundle.
Third-generation MOSFETs within the TWxxxZxxxC collection are supposed for industrial functions, reminiscent of EV charging stations, photovoltaic inverters, uninterruptible energy provides, and switching energy provides. Key specs embrace:
Transport now in quantity portions, the 4-pin SiC MOSFETs embrace the TW015Z120C, TW030Z120C, TW045Z120C, TW060Z120C, TW140Z120C, TW015Z65C, TW027Z65C, TW048Z65C, TW083Z65C, and TW107Z65C. To be taught extra about the advantages of the 4-pin TO-247-4L(X) bundle, click on right here.
Toshiba Digital Units & Storage
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