A brand new gate driver claims to ease the adoption of gallium nitride (GaN) expertise in client and industrial functions akin to energy provides in pc servers, factory-automation tools, motor drivers, photo voltaic and wind energy techniques, house home equipment, home followers, and wi-fi chargers by trimming dimensions and bill-of-materials (BOM) prices and facilitating sturdy security and electrical safety.
It additionally claims to be the primary galvanically remoted gate driver for GaN transistors; STGAP2GSN, unveiled by STMicroelectronics, minimizes propagation delay throughout the isolation barrier at simply 45 ns whereas guaranteeing quick dynamic response. Subsequent, dV/dt transient immunity of ±100 V/ns over the total temperature vary guards in opposition to undesirable transistor gate change.
The GaN driver is on the market in customary and slim variations. Supply: STMicroelectronics
The STGAP2GS driver options separate sink and supply pins for straightforward tuning of the gate-driving operation and efficiency. That ensures tightly managed switching transitions as much as excessive working frequencies with sinking and sourcing as much as 3-A gate present to the linked GaN transistor.
The one-channel driver will be linked to a high-voltage rail of as much as 1,200 V, and with a narrow-body model of STGAP2GS, it may be linked to 1,700 V rails whereas offering gate driving voltage of as much as 15 V. And in addition to built-in galvanic isolation, it options built-in system safety that features thermal shutdown and under-voltage lockout (UVLO).
Two demonstration boards—EVSTGAP2GS and EVSTGAP2GSN—mix the usual and slim variations of STGAP2GSN gate driver with ST’s SGT120R65AL 75 mΩ, 650 V enhancement-mode GaN transistors to assist customers consider the drivers’ capabilities.
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