Crystal IS, an Asahi Kasei firm, introduced the profitable manufacturing of a 4-inch (100 mm) diameter single-crystal aluminum nitride (AlN) substrate. That is the primary reported aluminum nitride substrate at this dimension and demonstrates the scalability of Crystal IS processes for rising AlN bulk single-crystals to satisfy manufacturing calls for for this semiconductor materials.
Aluminum nitride substrates have low defect densities, excessive UV transparency, and low concentrations of impurities. AlN is enticing for a wide range of industries, equivalent to UVC LEDs and energy units, on account of its ultra-wide bandgap and really excessive thermal conductivity. The 4-inch substrate produced exhibits a usable space of over 80% based mostly on present necessities for UVC LEDs.
“We’re extraordinarily excited to announce the achievement of a 4-inch bulk aluminum nitride substrate,” mentioned Dr Naohiro Kuze, Government Fellow, Analysis Laboratory of Superior Science and Know-how of Asahi Kasei. “This accomplishment signifies that aluminum nitride is commercially viable for brand new industries past simply UVC LEDs.”
Based in 1997 to develop native aluminum nitride substrates, Crystal IS manufactures UVC LEDs on its business course of for 2-inch diameter substrates. These LEDs allow industry-leading relia-bility and efficiency on the ideally suited germicidal wavelengths from 260 nm – 270 nm. The present capability of the ability can meet the amount necessities for client units utilizing UVC LEDs based mostly on the prevailing 2-inch manufacturing line.
“This means the scalability of our processes to ship high quality units on Aluminum Nitride,” mentioned Eoin Connolly, President and CEO of Crystal IS. “We’re pleased with the staff’s accomplishment and its influence on the semiconductor {industry} as an entire.”
Crystal IS at present produces 1000’s of 2-inch substrates yearly to help the manufacturing of its Klaran and Optan product strains. The commercialization of 4-inch AlN substrates will quadruple the gadget output of the prevailing footprint of the Inexperienced Island facility. It can additionally allow the event of latest purposes on aluminum nitride substrates because it integrates into present fabrication strains for energy and RF units utilizing various supplies.
Crystal IS will current the progress on 4-inch substrates at this month’s twenty third American Convention on Crystal Progress and Epitaxy in Tucson, Arizona. For extra data on Aluminum Nitride and Crystal IS merchandise, go to cisuvc.com or contact pr@cisuvc.com.
