Recap of CES 2023: Edge AI, ADAS and Extra

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EE Instances and AspenCore workers had been on-site at CES 2023, in January, offering skilled protection on the most recent and best developments on the convention. Our editors coated a variety of subjects, together with edge AI, ADAS, wide-band hole semiconductors, well being tech and extra.

Right here’s a recap of our protection, in case you missed any of it:

On Faucet at CES: Well being Tech, Good Mixers and Edge AI

Nitin Dahad, editor in chief of embedded.com and correspondent for EE Instances, discusses newest information and business traits from the CES 2023 Unveiled occasion, highlighting well being tech, sensible mixers and edge AI.

Cybersecurity Label for U.S. Coming as Early as April

Progress within the availability of business linked units has led the NIST to create new cybersecurity requirements to get IoT units safe.

Infineon’s WBG Catch-Up With GAN Techniques Acquisition

Infineon acquired GAN Techniques for $830 million to bolster its WBG expertise roadmap for next-generation energy electronics.

ADAS is Again within the Driver’s Seat at CES 2023

Automotive OEMs, tier 1s, IC suppliers and software program builders are aiming at ADAS purposes whereas mentioning autonomous driving in future roadmap.

Navitas’ Design Journey within the GaN Semiconductor Realm

The CES 2023 ground was an excellent place to gauge the design progress that GaN semiconductor gamers like Navitas have revamped the previous years.

The Design View from GaN Techniques’ Sales space at CES 2023

GaN semiconductors had been a outstanding spotlight at CES 2023 alongside EVs and different merchandise constructed round power effectivity targets.

Companions Unveil GaN Audio Amp Reference Design

GaN Techniques and Axign have developed a 1000-W Class-D GaN audio amplifier to allow smaller, extra environment friendly and extra highly effective audio programs.

The Diverging Worlds of SiC and GaN Semiconductors

There are candy spots for SiC and GaN energy units and there’s some struggle on the perimeters between these WBG semiconductor applied sciences.