A low-cost gate driver resolution for gallium nitride (GaN) FETs has been made accessible for low- to mid-power functions like LED lighting, charging, microinverters, UPSes, and gaming computer systems. The facility techniques in these merchandise don’t sometimes require superior options comparable to security isolation, so utilizing premium drivers could unnecessarily enhance the price of the invoice of supplies (BOM).
Transphorm’s high-speed, non-isolated, high-voltage half-bridge gate driver claims to cut back whole system price with out affecting the GaN FET’s or system’s efficiency. In response to Philip Zuk, senior VP of enterprise growth and advertising and marketing at Transphorm, not like competing e-mode GaN options that require customized drivers or stage shifting circuitry with gate safety units, Transphorm’s SuperGaN FETs can simply pair with off-the-shelf drivers.
“Nevertheless, whereas the corporate’s usually off GaN units can work with off-the-shelf drivers, the flexibility to make use of a choose driver generally is a main benefit,” he added. “It permits engineers to decide on drivers based mostly on various levels of efficiency advantages whereas retaining extra management over the ability system’s price.”
GaN FETs can ship as much as 99% effectivity by utilizing a easy half-bridge gate driver. Supply: Transphorm
The half-bridge gate driver has been examined with TP65H070LSG, Transphorm’s 650 V, 72 mΩ GaN FET made accessible in a PQFN88 bundle. It may be utilized in bridge topologies comparable to resonant half-bridge, totem-pole PFC, sine-wave inverter, or lively clamp flyback.
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