Toshiba has begun quantity transport of the MG250YD2YMS3, a twin SiC MOSFET module with a drain-source voltage score of 2200 V to be used in industrial tools. Meant for 1500-VDC purposes, similar to photovoltaic energy programs and vitality storage programs, the module offers a steady drain present of 250 A (500 A pulsed) and may function at channel temperatures as much as 150°C.
The MG250YD2YMS3 affords low conduction loss with a low drain-source on-voltage (sense) of 0.7 V typical. It additionally has turn-on and turn-off switching lack of 14 mJ and 11 mJ, respectively. These traits contribute to increased tools effectivity. Low switching loss additionally permits a standard three-level circuit to get replaced with a two-level circuit with a decrease module rely, which helps to downsize industrial tools.
Key specs for the MG250YD2YMS3 embody:
Use the product web page hyperlink beneath to entry the datasheet for the MG250YD2YMS3 twin SiC MOSFET module.
Toshiba Digital Units & Storage
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