Micron introduced its UFS 4.0 cellular storage resolution and revealed that it has already shipped qualification samples to “choose international smartphone producers and chipset distributors”.
The brand new tech will probably be used to fabricate storage in 256GB, 512GB and 1TB capacities. Excessive-volume manufacturing will start within the second half of this yr, so it will likely be some time earlier than the primary telephones with Micron UFS 4.0 storage arrive.
This storage is constructed on 232-layer TLC flash (triple-level cells, i.e. storing 3 bits per cell). In keeping with the corporate, its six-plane NAND structure permits increased random learn throughput. In comparison with earlier technology storage write bandwidth is 100% increased, learn bandwidth is 75% increased.
In additional concrete numbers, Micron’s UFS 4.0 storage presents as much as 4,300Mbps sequential learn speeds and as much as 4,000Mbps sequential write speeds. That’s increased than Samsung’s UFS 4.0, particularly the write score.
Moreover, the brand new UFS 4.0 chips are 25% extra energy environment friendly and promise 10% decrease write latency.
Are you prepared for the following huge factor in #cellular storage? Introducing Micron UFS 4.0 storage, purpose-built for flagship smartphones. Constructed on superior 232-layer 3D NAND, it delivers best-in-class efficiency and energy in capacities as much as 1TB. https://t.co/PWqS252Ccc pic.twitter.com/lnAXWFlwOW
— Micron Expertise (@MicronTech) June 21, 2023
